| PART |
Description |
Maker |
| GS8160Z18T-200 GS8160Z18BT-250 GS8160Z18BT-150 GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8161Z18BT-150I GS8161Z18BGT-150 GS8161Z32BD-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 7.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8162Z72CC-150 GS8162Z72CC-333I GS8162Z72CC GS816 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160ZV18CT-333 GS8160ZV18CT-333I GS8160ZV18CT-30 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8162Z72C |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 35.7流水线和流量，通过同步唑的SRAM
|
GSI Technology, Inc.
|
| GS8160Z36T-133I |
8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| IDT70V9289L 70V9389_DS_62206 IDT70V9389L9PRFI IDT7 |
64K x 18 Synch, 3.3V Dual-Port RAM, PipeLined/Flow-Through
64K x 16 Sync, 3.3V Dual-Port Ram, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64K x18/x16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
From old datasheet system
|
IDT[Integrated Device Technology]
|
| GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量，通过同步唑的SRAM
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| IDT71P74104S167BQ IDT71P74804S250BQ IDT71P74604S20 |
18Mb Pipelined QDR II SRAM Burst of 4 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 512K X 36 QDR SRAM, 0.45 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 2M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDTIDT71P79204167BQ IDTIDT71P79204250BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 35.7流水线⑩二二氧化硅的DDR SRAM的爆
|
Integrated Device Technology, Inc.
|
